▎ 摘　　要

NOVELTY - The modulator has an indium gallium zinc oxide film layer located between first and second metal oxide film layers to form a laminated structure. A first graphene layer is laminated on a surface of the first metal oxide film layer as a first electrode. A second graphene layer is laminated on a surface of the second metal oxide film layer as a second electrode. The flexible substrate layer is laminated on a set of graphene strips. USE - Flexible terahertz modulator. ADVANTAGE - The modulator adjusts conductivity of the indium gallium zinc oxide film layer in a terahertz wave band by voltage so as to utilize the first and second graphene layers as the electrode to prepare the modulator, thus realizing modulation of the terahertz wave transmittance, hence reducing device insertion loss. The modulator is convenient for integrated design, low in manufacturing cost, and realizes large area terahertz control operation. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: a method for manufacturing a flexible tera hertz modulator; and a method for adjusting a flexible terahertz modulator. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a flexible terahertz modulator.