▎ 摘　　要

NOVELTY - Low-temperature chemical vapor deposition preparation of graphene strip includes polishing electrolytic copper foil as anode, copper plate as cathode, inserting electrodes into polishing solution, electrifying, drying with nitrogen; annealing copper foil in quartz tube reactor and horizontal heating furnace constant-temperature area, evacuating inner wall of quartz tube reactor, passing hydrogen, heating furnace; annealing, adjusting hydrogen flow rate, passing liquid carbon, growing graphene into copper foil strips, controlling pressure and growth time; and cooling to room temperature. USE - Method for preparing graphene strip adopting low-temperature chemical vapor deposition (claimed). ADVANTAGE - The surface of copper foil has high chemical activity. DETAILED DESCRIPTION - Low-temperature chemical vapor deposition preparation of graphene strip comprises polishing electrolytic copper foil as anode and copper plate as cathode, simultaneously inserting two electrodes into polishing solution, electrifying at constant current of 1-1.5 A for 70-120 seconds, drying with nitrogen, setting aside; annealing copper foil in quartz tube reactor and horizontal heating furnace constant-temperature area, where one end of quartz tube reactor is connected to hydrogen bottle and liquid carbon container and other end connected to vacuum pump, evacuating inner wall of quartz tube reactor to 10-2 torr, passing hydrogen at 4-10 standard cubic centimeter/minute (sccm), heating furnace at 5-50 degrees C/minute, heating to 500-950 degrees C for 30-60 minutes; annealing at 500-580 degrees C, adjusting hydrogen flow rate to 2.4-3 sccm, passing liquid carbon, growing graphene into copper foil strips, controlling pressure at 2-10 torr and controlling growth time for 10-50 minutes; and cooling to room temperature. The said electrolytic polishing solution is obtained by mixing uniformly 1000 ml deionized water, 500 ml phosphoric acid, 500 ml ethanol, 100 ml isopropanol and 9 g urea.