• 专利标题:   Improving electrochemical gas graphene layer stripping transfer speed comprises E.G. growing graphene on initial substrate, transferring medium layer covered on the modified dielectric surface, and stripping.
  • 专利号:   CN107761070-A
  • 发明人:   MA L, REN W, DONG S, CHENG H
  • 专利权人:   INST METAL RES CHINESE ACAD SCI
  • 国际专利分类:   C23C016/01, C23C016/26, C23C016/56
  • 专利详细信息:   CN107761070-A 06 Mar 2018 C23C-016/26 201825 Pages: 8 Chinese
  • 申请详细信息:   CN107761070-A CN10673725 16 Aug 2016
  • 优先权号:   CN10673725

▎ 摘  要

NOVELTY - Improving electrochemical gas graphene layer stripping transfer speed comprises growing graphene on initial substrate using chemical vapor deposition, forming a layer of modified medium on graphene surface to improve wettability between graphene and electrolyte, transferring medium layer covered on the modified dielectric surface, and stripping the graphene from the initial substrate surface using electrochemical gas intercalation and transferring to the target substrate surface. USE - The method is useful for improving electrochemical gas graphene layer stripping transfer speed. ADVANTAGE - The method: improves transfer efficiency of the graphene.