▎ 摘　　要

NOVELTY - Preparing nanoscale graphene structure involves selecting a substrate and growing graphene on the substrate. The chromium film of certain thickness is deposited on the graphene. The metallic chromium film is spin coated by electron beam resist. The electron beam lithography technology exposes the image of electron beam resist that is developing and fixing in the nano sizes. The structural image shows nanoscale structure of electron beam resist at the first mask. The metallic chromium film is etched by using ion beam etching technology to form a chromium film pattern. USE - Method for preparing nanoscale graphene structure (claimed). ADVANTAGE - The method enables to prepare nanoscale graphene structure that has a size of 10 nanometers and the method prevents direct contact of graphene and electron beam resist. DETAILED DESCRIPTION - Preparing nanoscale graphene structure involves selecting a substrate and growing graphene on the substrate. The chromium film of certain thickness is deposited on the graphene. The metallic chromium film is spin coated by electron beam resist. The electron beam lithography technology exposes the image of electron beam resist that is developing and fixing in the nano sizes. The structural image shows nanoscale structure of electron beam resist at the first mask. The metallic chromium film is etched by using ion beam etching technology to form a chromium film pattern corresponding to the nanoscale structure of electron beam resist. The structural image of nanoscale chromium film is used in the second mask for etching graphene by controlling the etching parameters, to obtain nanoscale graphene structure. The remaining metallic chromium film is removed from the graphene surface by using etching liquid to obtain clean and pure nanoscale graphene structure.