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  • 专利标题:   Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.
  • 专利号:   WO2009113472-A1, KR2010129738-A, US2011117372-A1, JP2010502798-X, JP5388136-B2
  • 发明人:   SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M
  • 专利权人:   UNIV TOHOKU, UNIV TOHOKU NAT CORP, UNIV TOHOKU, UNIV TOHOKU
  • 国际专利分类:   C01B031/04, C23C016/02, C23C016/26, C23C016/42, C30B029/02, H01L021/205, C01B031/02, B05D005/12, B32B009/04, C23C016/56, C30B025/18
  • 专利详细信息:   WO2009113472-A1 17 Sep 2009 H01L-021/205 200964 Japanese
  • 申请详细信息:   WO2009113472-A1 WOJP054384 09 Mar 2009
  • 优先权号:   JP060097, KR720118

▎ 摘　　要

NOVELTY - A graphene or graphite thin film is formed on cubic crystal silicon carbide crystal thin film using a cubic silicon carbide crystal thin film having (111) orientation formed on silicon substrate. USE - Graphene or graphite thin film is used for diaphragm structure for electronic device (both claimed) and ultrahigh-speed device. ADVANTAGE - The graphene or graphite thin film is manufactured with high quality. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) manufacture of graphene or graphite thin film; and (2) diaphragm structure, which comprises silicon substrate, cubic crystal silicon carbide crystal thin film and graphene or graphite thin film.