▎ 摘　　要

NOVELTY - The modulator has a leakage electrode-dual-frequency point beyond material resonance structure (106) fixed on a graphene thin film (103) to realize double-frequency point modulation. An annular grate electrode (104) is arranged on a surface of a SOI substrate (101). An aluminum oxide grate medium layer (102) and a source electrode (105) are arranged on the leakage electrode dual-frequency point beyond material resonance structure. The leakage electrode-dual-frequency point beyond material resonance structure is made of silver, gold, copper, nickel and aluminum material. USE - SOI substrate graphene transistor terahertz wave double-point selecting frequency modulator. ADVANTAGE - The modulator reduces frequency loss, avoids working voltage adjustor requirements and realizes double-frequency point selecting frequency modulating process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a SOI substrate graphene transistor terahertz wave double-point selecting frequency modulator manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a SOI substrate graphene transistor terahertz wave double-point selecting frequency modulator. SOI substrate (101) Aluminum oxide grate medium layer (102) Graphene thin film (103) Annular grate electrode (104) Source electrode (105) Leakage electrode-dual-frequency point beyond material resonance structure (106)