▎ 摘　　要

NOVELTY - The device has a set of unit layers (L1- L4) spaced apart from each other along vertical direction. Each unit layer includes a patterned graphene layer that includes a nanoscale pattern, a nanomesh structure and a nanoribbon structure. Width of a pattern of the patterned graphene layer is in range from about 2 nanometer to about 10 nanometer. An insulation layer is provided between the adjacent unit layers. A transistor includes a single-gate structure and a double-gate structure (G1). A diode includes a layer combined with another layer i.e. metal semiconductor layer. USE - Semiconductor device e.g. transistor such as silicon-based MOSFET and diode e.g. PN diode and Schottky diode, for use as a switching device, driving device and a sensing device i.e. touch sensor, in an electronic device e.g. display device such as LCD device and organic LCD device, and photoelectronic device (all claimed) such as solar cell. Can also be used as a photo detector and a photo sensor for a memory device, radio frequency (RF) device and a logic device. ADVANTAGE - The nanomesh structure is formed by patterning the graphene layer, so that low operation characteristics, low uniformity and low reproducibility can be prevented and reduced, thus improving characteristics of the device and obtaining uniformity and reproducibility. The transistor has excellent uniformity and operation characteristics when the transistor is applied to the display, so that the display can have high reliability, operation characteristics and performance. The transistor is transparent, so that the display including the transistor has improved aperture ratio. The stacked number of the unit layers increases characteristics of the unit layers to approach normal values in a region, so that device-to-device variations can be reduced or prevented, thus realizing more uniform electric characteristics for the device. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) an electronic device comprising a semiconductor device (2) a method for manufacturing a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a transistor. Channel layer (C1) Double-gate structure (G1) Insulation layers (IN1-1N3) Unit layers (L1-L4) Substrate (SUB 1)