• 专利标题:   Manufacture of vanadium dioxide nanostructure involves heating quartz tube containing vanadium dioxide nanopowder and graphene layer-based substrate, depositing vanadium dioxide vapor on graphene layer, and growing nanostructure.
  • 专利号:   KR1816752-B1
  • 发明人:   KIM K C, OH S A, CHAE Y E, YOON J H, KIM J I
  • 专利权人:   UNIV MOKWON CORP IND EDUCATIONAL PROGRAM
  • 国际专利分类:   C01G031/02, C23C016/40, C23C016/44, C23C016/448, C23C016/52, C30B029/16
  • 专利详细信息:   KR1816752-B1 09 Jan 2018 C23C-016/448 201811 Pages: 12
  • 申请详细信息:   KR1816752-B1 KR156701 23 Nov 2016
  • 优先权号:   KR156701

▎ 摘  要

NOVELTY - Manufacture of vanadium dioxide nanostructure involves adding vanadium dioxide nanopowder and a substrate made of a graphene layer into a quartz tube, maintaining quartz tube in vacuum atmosphere, injecting a purge gas into a quartz tube, heating the quartz tube to sublimate vanadium dioxide nanopowder into a vanadium dioxide vapor, depositing a vanadium dioxide vapor on the surface of the graphene layer by injecting a carrier gas during the heating, and growing the vanadium dioxide two-dimensional nanostructure by vapor-depositing the vanadium dioxide vapor. USE - Manufacture of vanadium dioxide nanostructure (claimed). DETAILED DESCRIPTION - Manufacture of vanadium dioxide nanostructure involves adding vanadium dioxide nanopowder and a substrate made of a graphene layer spaced apart at a predetermined interval, into a quartz tube, maintaining the quartz tube in a vacuum atmosphere, injecting a purge gas into a quartz tube, heating the quartz tube to sublimate vanadium dioxide nanopowder into a vanadium dioxide vapor, depositing a vanadium dioxide vapor on the surface of the graphene layer by injecting a carrier gas during the heating, and growing the vanadium dioxide two-dimensional nanostructure by vapor-depositing the vanadium dioxide vapor.