▎ 摘　　要

NOVELTY - Process for growth of graphene on a silicon carbide substrate by sublimation of silicon from the silicon carbide substrate surface, comprises positioning a silicon carbide substrate in a crucible and arranging the crucible in a reaction chamber, controlling the pressure and heating to the growth temperature, growing graphene on the surface of the substrate at a temperature of greater than 1400 degrees C and at an inert gas pressure of 600-1100 bar, where the heating is conducted in at least a first heating stage and a second heating stage. USE - The process is useful for the growth of graphene on a silicon carbide substrate. ADVANTAGE - The process: ensures the surface undergoes the proper modification for allowing homogenous graphene in one or more monolayers; enables reliable growth of one or more monolayers of graphene on a large scale substrate surface; enables control the thickness of the graphene grown; does not require any complex or costly ex-situ substrate treatments such as hydrogen etching or oxygen removal by silicon flux; and is more cost efficient and builds up additional commercial value compared to previously known processes. DETAILED DESCRIPTION - Process for growth of graphene on a silicon carbide substrate by sublimation of silicon from the silicon carbide substrate surface, comprises positioning a silicon carbide substrate in a crucible and arranging the crucible in a reaction chamber, controlling the pressure and heating to the growth temperature, growing graphene on the surface of the substrate at a temperature of greater than 1400 degrees C and at an inert gas pressure of 600-1100 bar, where: the heating is conducted in at least a first heating stage and a second heating stage; the first heating stage is conducted at a first heating rate up to a temperature of at least 1200 degrees C; and the second heating stage is conducted after the first heating stage and at a second heating rate which is faster than the first heating rate.