• 专利标题:   Growing graphene on silicon carbide substrate comprises positioning silicon carbide substrate in crucible, controlling pressure and heating to growth temperature and growing graphene on surface of substrate.
  • 专利号:   WO2012036608-A1, US2013171347-A1, EP2616390-A1, JP2013537164-W, CN103097283-A, CN103097283-B, JP5727017-B2, US9150417-B2, EP2616390-A4, EP2616390-B1
  • 发明人:   YAKIMOVA R, IAKIMOV T, SYVAEJAERVI M, SYVAJARVI M, SYVAE;JAE;RVI M
  • 专利权人:   YAKIMOVA R, IAKIMOV T, SYVAEJAERVI M, YAKIMOVA R, IAKIMOV T, SYVAJARVI M, GRAPHENSIC AB, GRAFINSK INC, GRAPHENSIC AB, GRAPHENSIC AB, GRAPHENSIC AB
  • 国际专利分类:   B82B003/00, B82Y030/00, C01B031/04, C01B031/02, B82Y040/00, C01B031/00, C01B032/184
  • 专利详细信息:   WO2012036608-A1 22 Mar 2012 B82B-003/00 201226 Pages: 18 English
  • 申请详细信息:   WO2012036608-A1 WOSE050328 23 Mar 2011
  • 优先权号:   SE050966, WOSE050328

▎ 摘  要

NOVELTY - Process for growth of graphene on a silicon carbide substrate by sublimation of silicon from the silicon carbide substrate surface, comprises positioning a silicon carbide substrate in a crucible and arranging the crucible in a reaction chamber, controlling the pressure and heating to the growth temperature, growing graphene on the surface of the substrate at a temperature of greater than 1400 degrees C and at an inert gas pressure of 600-1100 bar, where the heating is conducted in at least a first heating stage and a second heating stage. USE - The process is useful for the growth of graphene on a silicon carbide substrate. ADVANTAGE - The process: ensures the surface undergoes the proper modification for allowing homogenous graphene in one or more monolayers; enables reliable growth of one or more monolayers of graphene on a large scale substrate surface; enables control the thickness of the graphene grown; does not require any complex or costly ex-situ substrate treatments such as hydrogen etching or oxygen removal by silicon flux; and is more cost efficient and builds up additional commercial value compared to previously known processes. DETAILED DESCRIPTION - Process for growth of graphene on a silicon carbide substrate by sublimation of silicon from the silicon carbide substrate surface, comprises positioning a silicon carbide substrate in a crucible and arranging the crucible in a reaction chamber, controlling the pressure and heating to the growth temperature, growing graphene on the surface of the substrate at a temperature of greater than 1400 degrees C and at an inert gas pressure of 600-1100 bar, where: the heating is conducted in at least a first heating stage and a second heating stage; the first heating stage is conducted at a first heating rate up to a temperature of at least 1200 degrees C; and the second heating stage is conducted after the first heating stage and at a second heating rate which is faster than the first heating rate.