▎ 摘　　要

NOVELTY - The semiconductor device has a source (S10) and a drain (D10) that are spaced apart from each other. A semiconductor element (C10) is between the source and drain, and contacts the drain and spaced apart from the source. A graphene layer (GP10) is disposed on and connects the source and semiconductor element. The graphene layer is spaced apart from the drain. A gate (G10) is formed on a gate insulating layer (G110) that is disposed on the graphene layer. USE - Semiconductor device e.g. transistor and planar type graphene barristor for electronic apparatus. ADVANTAGE - Contact characteristics between graphene and semiconductor element is improved by preventing damage of graphene due to plasma processes or sputtering processes, while reducing the size of device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a manufacturing method of semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows the cross sectional view of the semiconductor device. Semiconductor element (C10) Drain (D10) Gate (G10) Gate insulating layer (G110) Graphene layer (GP10) Source (S10)