• 专利标题:   Preparing laser light-induced graphene, comprises providing substrate including polyimide or polyetherimide, and adjusting laser light source and far-infrared auxiliary light source to irradiate substrate.
  • 专利号:   TW747699-B1, TW202227360-A
  • 发明人:   TSENG S, CAI Y
  • 专利权人:   UNIV NAT TAIPEI TECHNOLOGY
  • 国际专利分类:   B23K026/082, C01B032/184, C08G073/10
  • 专利详细信息:   TW747699-B1 21 Nov 2021 C01B-032/184 202245 Pages: 29 Chinese
  • 申请详细信息:   TW747699-B1 TW100327 05 Jan 2021
  • 优先权号:   TW100327

▎ 摘  要

NOVELTY - A method for preparing laser-induced graphene, comprising providing a substrate; and adjusting a laser light source and a far-infrared auxiliary light source to irradiate the substrate, and further forming a laser light-induced graphene on a surface of the substrate. By combining the technical features of the method with the far-infrared auxiliary light source, the present invention can effectively improve the defect and the electrical properties of the laser-induced graphene.