• 专利标题:   LED chip perpendicular structure has substrate that is provided with graphene layer, zinc oxide nano wall structure, gallium nitride layer, indium-gallium nitride layer multi quantum layer and p-gallium nitride.
  • 专利号:   CN103258926-A, CN103258926-B
  • 发明人:   AN J, ZHANG J, BU E, HOU X, LI F, MENG L
  • 专利权人:   UNIV XIAN JIAOTONG
  • 国际专利分类:   H01L033/02, H01L033/64
  • 专利详细信息:   CN103258926-A 21 Aug 2013 H01L-033/02 201376 Chinese
  • 申请详细信息:   CN103258926-A CN10156642 28 Apr 2013
  • 优先权号:   CN10156642

▎ 摘  要

NOVELTY - The LED chip perpendicular structure has a substrate that is provided with a graphene layer, a zinc oxide nano wall structure, a gallium nitride layer, an indium-gallium nitride multi quantum layer and a p-gallium nitride which are arranged sequentially. The substrate is made of silicon, silicon carbide, coppertungsten and molybdenum. The thickness of substrate is 20 to 500 mu . USE - LED chip perpendicular structure. ADVANTAGE - The light emitting area of the LED chip perpendicular structure can be enlarged. The heat-sinking capability, production efficiency and durability of the LED chip perpendicular structure can be improved. The LED manufacturing process of the chip perpendicular structure can be simplified. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing LED chip perpendicular structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the LED chip perpendicular structure. (Drawing includes non-English language text)