• 专利标题:   Flexible graphene thin film used for transparent electrode devices, comprises flexible substrate, titanium buffer layer grown on one side of flexible substrate by sputtering and graphene thin film layer grown in-situ in same equipment.
  • 专利号:   KR2023060891-A
  • 发明人:   YOON S G, IREH H
  • 专利权人:   UNIV IND ACADEMIC COOP IN CHUNGNAM NAT
  • 国际专利分类:   C01B032/186, C23C016/02, C23C016/26, H10K099/00
  • 专利详细信息:   KR2023060891-A 08 May 2023 C23C-016/26 202341 Pages: 21
  • 申请详细信息:   KR2023060891-A KR145590 28 Oct 2021
  • 优先权号:   KR145590

▎ 摘  要

NOVELTY - Flexible graphene thin film comprises flexible substrate; a titanium buffer layer grown on one side of the flexible substrate by sputtering; and graphene thin film layer grown in-situ in the same equipment as the sputtering equipment on one surface of the titanium buffer layer. The flexible substrate maintains a strain recovery of substrate of ≥ 98% when the titanium buffer layer and the graphene thin film layer are stretched by ≥ 10% in a grown state in which they are grown. USE - The flexible graphene thin film is useful for transparent electrode devices and elongated device. ADVANTAGE - The flexible graphene thin film: has excellent structural stability and thermal/electrical conductivity and simple manufacturing process; is stable and suitable for mass-production; prevents mechanical damage such as wrinkles, cracks, and ripples on one side of graphene in the transfer process; improves adhesive strength and bonding force between the substrate and the graphene thin film layer; saves time; decreases sheet resistance during tension; directly grows graphene on a flexible substrate by lowering the growth temperature of the graphene thin film layer to ≤ 200° C; and maintains electrical properties even when stretched in a tensile strain range of ≤ 15% and repeatedly stretched at 5-10%. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: producing a flexible graphene thin film comprising (a) forming a titanium buffer layer on a flexible substrate and (b) growing a graphene thin film layer on the titanium buffer layer in-situ in the same device; and flexible graphene thin film-based electronic device comprising flexible substrate, titanium buffer layer grown on one side of the flexible substrate by sputtering, and graphene thin film layer grown in-situ in the same equipment as the sputtering equipment on one surface of the titanium buffer layer. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method of manufacturing a flexible graphene thin film (Drawing includes non-English language text).