▎ 摘　　要

NOVELTY - The apparatus has a graphene layer (10) that is placed over a portion of an upper surface (6a) of a semiconductor structure (6). An upper surface with a first portion collects photogenerated carriers generated within the semiconductor structure and establishes a potential on the surface of the structure. A bottom side contact structure is electrically connected to the semiconductor structure. A top side contact structure (14) is electrically connected to a second portion of the upper surface of the graphene layer with specific nm thickness. USE - Ultraviolet or extreme ultraviolet and/or visible detector apparatus with photodetectors such as active pixel photodetectors, monolithic active pixel photodetectors, hybrid photodetectors, non-avalanched photodetectors, avalanched photodetectors and/or Geiger mode photodetectors. ADVANTAGE - The graphene/semiconductor heterojunction provides a controlled surface potential on the surface of the semiconductor without a dead layer. By increasing doping concentration in the graphene, the dead layer in the semiconductor structure near the surface traping a portion of the photogenerated holes is minimized or eliminated. The resistance lowering feature and surface potential control feature of the graphene layer improves the performance of monolithic active pixel photodetector cells. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional side elevation view of two cells and an intervening isolation structure in the apparatus. Semiconductor structure (6) Upper surface (6a) Graphene layer (10) Top side contact structure (14) Dielectric (16)