• 专利标题:   Magneto resistive sensor for use in power industry field power operation device, such as current measurement, has graphene magnetic field induction array structure layer that is formed as circular array or rectangular array structure layers.
  • 专利号:   CN115754847-A
  • 发明人:   LUO B, LV Q, YAO S, WANG Z, LIU Z, FAN X, LIN Y, CHEN R, XU Z, LI L, TIAN B, LI P
  • 专利权人:   SOUTHERN POWER GRID DIGITAL POWER NETWOR
  • 国际专利分类:   G01R033/09
  • 专利详细信息:   CN115754847-A 07 Mar 2023 G01R-033/09 202322 Chinese
  • 申请详细信息:   CN115754847-A CN11433320 16 Nov 2022
  • 优先权号:   CN11433320

▎ 摘  要

NOVELTY - The magneto resistive sensor comprises graphene magnetic field induction array structure layer, a medium structure and graphene charge layer (5). The medium structure is located graphene the magnetic field induction array structure layer and the graphene charge layer. The graphene magnetic field induction array structure layer is graphene magnetic field induction circular array structure layer or graphene magnetic field induction rectangular array structure layer. USE - Magneto resistive sensor based on magnetic field induction graphene structure used for power industry field power operation device, such as current measurement, fault position measurement, movement speed of power device action, angle and angular velocity measurement. ADVANTAGE - The magneto-resistive sensor has high anti-interference ability and high precision, it greatly improves the sensitivity of the magneto resistive sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a side sectional view of a magneto resistive sensor. 1Magnetic field sensing area 2Insulating layer 3Conductive strip 4Dielectric layer 5Graphene charge layer