▎ 摘　　要

NOVELTY - The method involves evaporating silicon oxide (212) on silicon substrate (211) and forming a silicon oxide substrate (210). Graphene is transcribed on the silicon oxide substrate. A germanium thin film (230-232) in the high temperature is grown. The crystallization of the germanium thin film is improved through the thermal process. The germanium thin film on the graphene at low temperature is grown. Each germanium thin film is grown using the low-pressure chemical vapor deposition (LP-CVD) technique. USE - Germanium mono crystal thin film manufacturing method for solar cell (claimed). ADVANTAGE - The internal defect of high quality single crystalline germanium thin film growth is minimized. The transcription process needed for the high efficient solar cell manufacture which has flexibility is provided, because the germanium single crystal thin film is formed on the silicon oxide substrate. The excellent electric conduction using the graphene as the electrode is achieved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for germanium mono crystal thin film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the germanium single crystal thin film in which the buffer layer is formed using the graphene. (Drawing includes non-English language text) Silicon oxide substrate (210) Silicon substrate (211) Silicon oxide (212) Buffer layer (220) Germanium thin film (230-232)