• 专利标题:   Preparing a copper single wafer, comprises e.g. performing oriented growth by taking the seed crystal as nucleation center in the traction process to obtain a single crystal copper rod with determined orientation, and fixing the single crystal copper rod on line cutting support and cutting.
  • 专利号:   CN115287757-A
  • 发明人:   XIAO L, HAN L, ZUO T, GAO Z, RU Y, XUE J
  • 专利权人:   INST ELECTRICAL ENG CHINESE ACAD SCI
  • 国际专利分类:   C30B011/00, C30B025/18, C30B029/02
  • 专利详细信息:   CN115287757-A 04 Nov 2022 C30B-029/02 202311 Chinese
  • 申请详细信息:   CN115287757-A CN10799889 08 Jul 2022
  • 优先权号:   CN10799889

▎ 摘  要

NOVELTY - Preparing a copper single wafer, comprises (1) placing the polycrystalline copper block in an intelligent vacuum induction orienting furnace, vacuumizing, starting electromagnetic induction heating, preserving heat, starting a traction system after the copper block is completely melted, welding a seed crystal copper column at the top end of a traction rod, and performing oriented growth by taking the seed crystal as a nucleation center in the traction process to obtain a single crystal copper rod with determined orientation, and (2) fixing the single crystal copper rod with the resultant determined orientation on a line cutting support, cutting along the direction parallel to the cross-section, controlling the cutting speed of the control line, obtaining the single crystal copper sheet with determined orientation, performing mechanical and electrochemical polishing to the single crystal copper sheet and obtaining the final product with smooth two sides determined orientation. USE - The copper single wafer is useful in preparing single crystal graphene (claimed). ADVANTAGE - The method: is simple and economical; ensure the high yield and quality.