▎ 摘　　要

NOVELTY - The utility model claims a GaN-based light-emitting diode epitaxial wafer, belonging to the GaN-based light emitting diode field. said light emitting diode epitaxial wafer, comprising: a substrate, a graphene layer sequentially deposited on the substrate, the metal nanometer particle layer, three-dimensional nucleation layer, an un-doped GaN layer, an N-type doped GaN layer, multi-quantum well layer, the electron barrier layer, and a P-type doped GaN layer, the metal nanometre particle layer comprises a plurality of metal nano-particles located on the graphene layer, and each of the metal nano-particles are in contact with the graphene layer, the diameter of the metal nano-particle is 1 to 20nm. adjacent gap exists between the metal nanometer particle.