• 专利标题:   LED, has semiconductor capping layer on surface of electrode and comprising graphite layer and metal layer, graphene-containing layer provided on metal layer, and ohmic contact provided between metal layer and graphene-containing layer.
  • 专利号:   CN102637801-A
  • 发明人:   CAI D, FAN Y, LIU Z, REN G, WANG J, XU G, XU K, ZHONG H
  • 专利权人:   SUZHOU NANOWIN SCI TECHNOLOGY CO LTD, CHINESE ACAD SCI SUZHOU NANOTECH NANO
  • 国际专利分类:   H01L033/40
  • 专利详细信息:   CN102637801-A 15 Aug 2012 H01L-033/40 201276 Pages: 7 Chinese
  • 申请详细信息:   CN102637801-A CN10416204 14 Dec 2011
  • 优先权号:   CN10416204

▎ 摘  要

NOVELTY - The LED has an active layer provided with a conductive type semiconductor layer. The semiconductor layer and the active layer are provided on an upper surface. A semiconductor capping layer on a surface of an electrode comprises a graphite layer and a metal layer. The graphene-containing layer is provided on the metal layer and the semiconductor capping layer for an ohmic contact. The ohmic contact is provided between the metal layer and the graphene-containing layer. USE - LED. ADVANTAGE - The LED reduces any metal or alloy contact potential barrier with the semiconductor. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of an LED.