▎ 摘　　要

NOVELTY - The laser has a substrate layer formed on a substrate. A silicon layer is formed on a silicon dioxide layer. The silicon dioxide layer is formed with a graphene layer. The graphene layer is formed with a quantum point layer at room temperature. Thickness of the substrate layer is 500 micrometer. Thickness of the silicon dioxide layer is 300nm. Graphite material is selected from molybdenum disulfide and tungsten diselenide. Thickness of the quantum point layer is 1-10nm. The quantum point layer contains quantum point material that is selected from germanium and indium arsenide. USE - Semiconductor quantum point laser for a photoelectric device. ADVANTAGE - The laser enhances lighting performance, satisfies room temperature and provides spectrum of 800-850nm wave band. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a semiconductor quantum point laser. '(Drawing includes non-English language text)'