▎ 摘　　要

NOVELTY - Producing (P1) high purity highly crystalline reduction graphene oxidation of silicon, comprises: (i) oxidizing graphite by injecting and oxidizing graphite in a Kuett-Taylor reactor having an outer cylinder and an inner cylinder having the same center and different radii and allowing the fluid to flow in accordance with rotation of the inner cylinder; (ii) forming an oxide graphene in which oxidized graphite is put into the Kuett-Taylor reactor to be peeled and converted into an oxidized graphene; and removing the impurities present in the graphene oxide. USE - The processes are useful for: producing high purity highly crystalline reduced graphene oxide; and producing reduced oxidized graphite (all claimed). ADVANTAGE - The process is cost-effective and requires less process time. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) high-purity highly crystalline reduced graphene oxide having an oxygen content of 0% and a sulfur content of 100%; (2) producing (P2) reduced oxidized graphite, comprising a graphite oxidation step of injecting and oxidizing graphite in the Kuett-Taylor reactor, and removing impurities generated in the graphite oxidation step by injecting energy into the oxidized graphite; (3) the reduced oxidized graphite prepared by the process (P2); and (4) an impurity removal device (100) comprising a graphite oxidizing unit (110) including the Kuett-Taylor reactor, where the graphite oxidizing unit is able to oxidize by injecting graphite, an oxidized graphite peeling unit (120) for applying the oxidized graphite to peel off with an oxidized graphite, and impurity removing means (130) for removing the impurities of the oxidized graphene. DESCRIPTION OF DRAWING(S) - The figure shows a schematic view of the impurity removal device. Impurity removal device (100) Graphite oxidizing unit (110) Inlet (111) Oxidized graphite peeling unit (120) Impurity removing means (130)