• 专利标题:   Preparation of aluminum-based copper-plated graphene thin film composite material involves immersing aluminum sample in zinc solution, washing, immersing in copper bath, plating, immersing in copper-graphene solution and washing.
  • 专利号:   CN104593841-A, CN104593841-B
  • 发明人:   CHEN J, FAN H, HUANG Y, LI Q, LI Y, SUN M, WANG H, WU Y, CHEN Z, WEI X, JIE X
  • 专利权人:   UNIV GUANGXI NORMAL
  • 国际专利分类:   C25D015/00, C25D003/38, C25D005/10, C25D005/18, C25D005/44
  • 专利详细信息:   CN104593841-A 06 May 2015 C25D-005/10 201551 Pages: 9 Chinese
  • 申请详细信息:   CN104593841-A CN10848015 31 Dec 2014
  • 优先权号:   CN10848015

▎ 摘  要

NOVELTY - Preparation of aluminum-based copper-plated graphene thin film composite material involves degreasing aluminum substrate at 65 degrees C for 3 minutes, washing with water, processing the resultant sample at 25 degrees C for 2 minutes under light, washing with water, immersing the resultant sample in zinc solution at 25 degrees C for 2 minutes, washing, immersing the sample in copper plating bath, carrying out direct current plating process at 25 degrees C for 5 minutes, washing with water, immersing the resultant sample in copper-graphene composite solution at 25 degrees C for 20-40 minutes, and washing with water. USE - Preparation of aluminum-based copper-plated graphene thin film composite material (claimed). ADVANTAGE - The method provides aluminum-based copper-plated graphene thin film composite material having high thermal conductivity, by simple process. DETAILED DESCRIPTION - Preparation of aluminum-based copper-plated graphene thin film composite material involves degreasing aluminum substrate as sample at 65 degrees C for 3 minutes, washing with water, processing the resultant sample at 25 degrees C for 2 minutes under light, washing with water, immersing the resultant sample in zinc solution (a) at 25 degrees C for 2 minutes, washing with water, immersing the resultant sample in zinc solution (b) at 25 degrees C for 2 minutes, washing with water, immersing the sample in copper plating bath, carrying out direct current plating process at 25 degrees C for 5 minutes in current density of 1-4 A/dm2 and pole distance of 5 cm, washing with water, further immersing the resultant sample in copper-graphene composite solution at 25 degrees C for 20-40 minutes in current density 1-4 A/dm2 and pole distance of 5 cm, and washing with water.