▎ 摘　　要

NOVELTY - Preparation of aluminum-based copper-plated graphene thin film composite material involves degreasing aluminum substrate at 65 degrees C for 3 minutes, washing with water, processing the resultant sample at 25 degrees C for 2 minutes under light, washing with water, immersing the resultant sample in zinc solution at 25 degrees C for 2 minutes, washing, immersing the sample in copper plating bath, carrying out direct current plating process at 25 degrees C for 5 minutes, washing with water, immersing the resultant sample in copper-graphene composite solution at 25 degrees C for 20-40 minutes, and washing with water. USE - Preparation of aluminum-based copper-plated graphene thin film composite material (claimed). ADVANTAGE - The method provides aluminum-based copper-plated graphene thin film composite material having high thermal conductivity, by simple process. DETAILED DESCRIPTION - Preparation of aluminum-based copper-plated graphene thin film composite material involves degreasing aluminum substrate as sample at 65 degrees C for 3 minutes, washing with water, processing the resultant sample at 25 degrees C for 2 minutes under light, washing with water, immersing the resultant sample in zinc solution (a) at 25 degrees C for 2 minutes, washing with water, immersing the resultant sample in zinc solution (b) at 25 degrees C for 2 minutes, washing with water, immersing the sample in copper plating bath, carrying out direct current plating process at 25 degrees C for 5 minutes in current density of 1-4 A/dm2 and pole distance of 5 cm, washing with water, further immersing the resultant sample in copper-graphene composite solution at 25 degrees C for 20-40 minutes in current density 1-4 A/dm2 and pole distance of 5 cm, and washing with water.