▎ 摘　　要

NOVELTY - The method involves providing a substrate, where the substrate comprises an insulating layer and a semiconductor layer. A back gate electrode in the semiconductor layer is formed. A gate dielectric layer on a grid electrode is formed. A graphene-containing layer on the gate dielectric layer is formed. A back gate contact plug on a back gate contact layer is formed. A source/drain contact plug on the back gate electrode is formed. USE - Manufacturing method for graphene device. ADVANTAGE - The method enables providing a simple operation, and existing complementary metal-oxide-semiconductor transistor technology with good compatibility. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a manufacturing method for graphene device.'(Drawing includes non-English language text)'