• 专利标题:   Silicon carbide/graphene biomimetic laminated coating comprises multiple silicon carbide layers and graphene layers located between silicon carbide layers to obtain soft layer imitates organic protein in shell, and layers are silicon carbide layers to construct bionic multi-level structure.
  • 专利号:   CN113024281-A, CN113024281-B
  • 发明人:   ZHANG Y, CHEN G, SONG Q, ZHANG P
  • 专利权人:   UNIV NORTHWESTERN POLYTECHNICAL
  • 国际专利分类:   C04B041/89
  • 专利详细信息:   CN113024281-A 25 Jun 2021 C04B-041/89 202163 Pages: 8 Chinese
  • 申请详细信息:   CN113024281-A CN10221988 28 Feb 2021
  • 优先权号:   CN10221988

▎ 摘  要

NOVELTY - Silicon carbide/graphene biomimetic laminated coating comprises multiple silicon carbide layers and graphene layers, where the graphene layer is located between the silicon carbide layers to obtain a soft layer which imitates the organic protein in the shell, and the uppermost and lowermost layers are silicon carbide layers to construct a bionic multi-level structure that imitates the shell. USE - Silicon carbide/graphene biomimetic laminated coating. ADVANTAGE - The coating increases crack propagation path, absorbs more energy, increases fracture work, improves fracture toughness, reduces sensitivity to cracks, makes cracks expand in a stepped manner, avoids generation of penetrating cracks, improves oxidation resistance, and protects carbon/carbon substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing the laminated coating, involving (a) polishing and cleaning the surface of carbon/carbon composite material matrix, (b) hanging the carbon/carbon substrate in the deposition zone of the vertical resistance furnace, evacuating to below -0.09 Mpa, passing argon as a protective gas, and heating the furnace at 900-1300 degrees C at a heating rate of 3-10 degrees C/minute, passing in diluted argon and reaction hydrogen, when the temperature in the furnace reaches the deposition temperature, and turning on the carrier gas hydrogen to obtain methyltrichlorosilane into the reaction zone for deposition, controlling the control range of gas flow in process with diluted argon of 200-600 sccm, reaction hydrogen of 0.5-3 l/minute, and carrier gas hydrogen of 10-30 sccm, depositing for 1-5 hours, stopping the introduction of reaction gas, turning off the heating power supply to cool down naturally, dropping to room temperature, opening the furnace cover, and taking out the sample to obtain a silicon carbide coating on the surface of the carbon/carbon substrate, (c) adding the carbon/carbon substrate into a vertical resistance furnace, evacuating to below -0.09 Mpa, heating the furnace temperature at 900-1300 degrees C at a heating rate of 3-10 degrees C/minutes, when the temperature in the furnace reaches the deposition temperature, passing methanol with a flow rate of 1-4 l/minute, controlling the pressure in the furnace to 5-20 kPa with the deposition time of 1-5 hours, stopping the introduction of reaction gas, turning off the heating power to cool down naturally, opening the furnace cover after the temperature drops to room temperature, taking out the sample to obtain graphene on the surface of the silicon carbide coating, and (d) repeating steps (b) and (c) to alternately deposit silicon carbide and graphene on the surface of the carbon/carbon substrate, and the outermost layer is a silicon carbide layer, alternately depositing for n times to obtain n cycles of silicon carbide/G bionic laminated coating on the surface of the carbon/carbon substrate floor.