• 专利标题:   Nitrogen-doped large single crystal graphene film used as transparent conductive film for e.g. transparent electrode, is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen.
  • 专利号:   CN108950683-A
  • 发明人:   LIU Z, PENG H, LIN L, SUN L, ZHANG J
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   C30B029/02, C30B029/64, C30B025/00, C23C016/26, C23C016/02
  • 专利详细信息:   CN108950683-A 07 Dec 2018 C30B-029/02 201914 Pages: 13 Chinese
  • 申请详细信息:   CN108950683-A CN10372584 24 May 2017
  • 优先权号:   CN10372584

▎ 摘  要

NOVELTY - A nitrogen-doped large single crystal graphene film is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen. USE - Nitrogen-doped large single crystal graphene film is used as transparent conductive film for transparent electrode, high frequency electronic device, light emitting device, photovoltaic device, photodetector device, electrooptic modulation device, heat sink device and hydrophobic device (all claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of nitrogen-doped large single crystal graphene film, which involves growing single crystal graphene island on growth substrate by chemical vapor deposition in reducing gas and nitrogen-containing carbon source gas as growth atmosphere, subjecting single crystal graphene island to passivation treatment in an oxidizing atmosphere, and carrying out graphene regrowth by chemical vapor deposition method.