▎ 摘　　要

NOVELTY - The absorber has a graphene-black phosphorus dual-mode structure module and a dielectric material layer. The graphene-black phosphorus dual-mode structure module includes a first layer of graphene-black phosphorus dual-mode structure (1), a second layer of graphene-black phosphorus dual-mode structure (2) and a third layer of graphene-black phosphorus dual-mode structure (3). The dielectric material layers (4) are located between the first layer of graphene-black phosphorus dual-mode structure, the second layer of graphene-black phosphorus dual-mode structure and the third layer of graphene-black phosphorus dual-mode structure, and the first layer of graphene-black phosphorus dual-mode structure, the second layer of graphene-black phosphorus dual-mode structure and the third layer of graphene-black phosphorus dual-mode structure are covered. USE - Broadband infrared absorber of graphene-black phosphorus double-mould structure for photodiode detector, heterojunction p-n diode and saturated absorber. ADVANTAGE - The broadband infrared absorber has strong broadband absorption effect and insensitivity of incident angle. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the broadband infrared absorber of graphene black phosphorus. (Drawing includes non-English language text) 1First layer-graphene-phosphorus double-mould structure 2Second graphene-black-phosphorus double-mould structure 3Third graphene-black-phosphorus double-mould structure 4Dielectric material layer