▎ 摘　　要

NOVELTY - An insulating substrate and a copper foil are placed in a reactor, a mixed gas of protection gas and hydrogen is supplied, and the sample is heated. The reactor pressure is adjusted to 100-120 Pa, a carbon source, a protective gas, and hydrogen are introduced, and growth is carried out for 20-40 minutes. The pressure is then changed to 400-500 Pa and growth is carried out for 50-70 minutes. The temperature is reduced to obtain large-area graphene deposited on the insulating substrate. USE - Preparation of large-area graphene on insulating substrate by chemical vapor deposition, for circuit device. ADVANTAGE - The method enables simple and economical preparation of large-area graphene with high repeatability and low external interference, without requiring a complicated transfer process. DETAILED DESCRIPTION - An insulating substrate and a copper foil are cleaned. A mixed gas of protection gas and hydrogen is supplied to a reactor, and the cleaned sample is placed in the reactor, heated to 1005-1030 degrees C, and heat-preserved for 10-30 minutes. The reactor temperature is maintained and pressure is adjusted to 100-120 Pa, a carbon source, a protective gas, and hydrogen are introduced, and growth is carried out for 20-40 minutes. The pressure is then changed to 400-500 Pa and growth is carried out for 50-70 minutes. The temperature is reduced to room temperature and the sample is taken out as large-area graphene deposited on the insulating substrate.