▎ 摘　　要

NOVELTY - Chemically-sensitive field effect transistor (T1) (1) having multi-layered structure, comprises: substrate layer (10) having extended body; first non-conductive material layer positioned above the extended body of substrate layer; second non-conductive material layer positioned above first non-conductive material layer; source electrode and drain electrode each having planar arrangement; graphene layer (30) positioned within distance between first and second non-conductive material layer; and well structure (38) provided at least within the second non-conductive material layer. USE - The transistor is useful: in an integrated circuit for performing a sequencing reaction involving the sequencing of strands of nucleic acids (claimed); and as a complementary metal-oxide semiconductor biosensor. ADVANTAGE - The transistor: increases measurement sensitivity and accuracy; facilitates significantly small sensor sizes and dense graphene field effect transistor sensor based arrays; and exhibits improved fabrication techniques, as well as improved sensor devices. DETAILED DESCRIPTION - Chemically-sensitive field effect transistor (T1) (1) having a multi-layered structure, comprises: a substrate layer (10) having an extended body; a first non-conductive material layer positioned above the extended body of the substrate layer; a second non-conductive material layer positioned above the first non-conductive material layer; a source electrode and a drain electrode each having a planar arrangement and being in an opposed configuration to one another, one or both of the source and drain electrodes further having an impingement member, and one or both of the source and drain electrodes having a receiving member, where the impingement member is configured for being inserted within the receiving member, and the receiving member is configured for receiving the impingement member, the source and drain electrodes being separated from one another by a distance and being disposed within one or both of the first and second non-conductive material layers; a graphene layer (30) positioned within the distance between the first and second non-conductive material layer and extending between a surface portion of the source electrode and a surface portion of the drain electrode thereby forming a channel between the source and drain electrodes; and a well structure (38) provided at least within the second non-conductive material layer, where the well structure has a chamber bounded by at least one bounding member, and the bounding members are configured to include the source and drain electrodes as well as the graphene layer. INDEPENDENT CLAIMS are also included for: (1) chemically-sensitive field effect transistor (T2) having the multi-layered structure, comprising substrate layer having extended body with a top surface and a bottom surface, first non-conductive material layer positioned above the extended body of the substrate layer, where the first insulating layer has a top surface and a bottom surface, and the bottom surface of the first insulating layer contacts the top surface of the extended body of the substrate, second non-conductive material layer positioned above the first non-conductive material layer, where the second non-conductive material layer has a top surface and a bottom surface, and the bottom surface of the second non-conductive material layer contacts the top surface of the first non-conductive material layer, well structure provided in at least the second insulating layer, where the well structure has chamber extending inwards from the top surface of the second insulating layer toward the top surface of the first insulating layer, and the chamber can be defined by bounding member, source and drain having interdigitated configuration and being positioned proximate the second insulating layer adjoining the bounding member of the well structure, where the source separated from the drain by a space, and graphene layer positioned in the space between the source and drain electrodes to form a channel there between; (2) chemically-sensitive field effect transistor (T3) having the multi-layered structure, comprising substrate layer having extended body, first insulating layer positioned above the extended body of the substrate layer and a second insulating layer positioned above the first insulating layer and proximate the source and drain electrodes, well structure provided at least in the second insulating layer, where the well structure has an opening in it, the opening defined by bounding member, source electrode and drain electrode positioned within the second insulating layer proximate the bounding member, where the source electrode is separated from the drain electrode by a distance, and graphene layer positioned between the source and drain electrodes, to form a channel under of it; (3) chemically-sensitive field effect transistor (T4) having the multi-layered structure, comprising substrate layer having extended body, first insulating layer positioned above the extended body of the substrate layer, second insulating layer positioned above the first insulating layer, opening provided in the second insulating layer, the opening defined by a side surface and bottom surface, source electrode and drain electrode, where the source electrode is separated from the drain electrode by distance, and graphene layer positioned within the distance between the source and drain electrodes, where the source electrode, the graphene layer and the drain electrode are positioned within one or both of the side surface and the bottom surface defining the opening; and (4) an integrated circuit for performing a sequencing reaction involving the sequencing of strands of nucleic acids. DESCRIPTION OF DRAWING(S) - The figure shows a chemically-sensitive field-effect transistor having a graphene layered well structure that includes a nano- or micro- bead in it. Chemically-sensitive field effect transistor (1) Substrate layer (10) Gate (26) Graphene layer (30) Well structure (38)