• 专利标题:   Preparation of self-assembly nano-metal or semiconductor particle doped graphene microchip used for microelectronic devices, involves heating and reorganizing nano-metal or semiconductor particles contained in graphite oxide substrate.
  • 专利号:   CN103318875-A, CN103318875-B
  • 发明人:   GUO B, TONG L, WANG H, CHEN H
  • 专利权人:   JIANGNAN GRAPHENE RES INST
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103318875-A 25 Sep 2013 C01B-031/04 201408 Pages: 11 Chinese
  • 申请详细信息:   CN103318875-A CN10224175 08 Jun 2013
  • 优先权号:   CN10224175

▎ 摘  要

NOVELTY - Preparation of self-assembly nano-metal or semiconductor particle doped graphene microchip involves heating and reorganizing nano-metal or semiconductor particles contained in the graphite oxide-containing substrate, and reducing the graphite oxide. USE - Preparation of self-assembly nano-metal or semiconductor particle doped graphene microchip used for microelectronic devices. ADVANTAGE - The self-assembly nano-metal or semiconductor particle doped graphene microchip is prepared efficiently, and enables economical manufacture of microelectronic devices with excellent spatial ductility and high efficiency. The size and local ordering degree of the metal or semiconductor nano-particles are controlled through parameters such as laser scanning speed, frequency, and power.