▎ 摘　　要

NOVELTY - The method involves preparing a mixture of 90-99.9 wt.% cyclohexanone and 0.1-10 wt.% graphene oxide (S110). The mixture is vaporized and supplied to a chamber (S130). A thin film is deposited using plasma enhanced chemical vapor deposition (PECVD) by providing radio frequency (RF) power (S150), where the temperature inside the chamber is 100-200° C. A gap is formed between a showerhead and a heater in the chamber. Temperature, pressure and flow rate of the graphene oxide are adjusted by the RF power. The method further comprises supplying nitrous oxide to the chamber. USE - The method is useful for depositing thin film. ADVANTAGE - The method maximizes light absorption rate in visible light region when thin film is deposited by supplying graphene oxide as raw material gas. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for depositing thin film (Drawing includes non-English language text). S110Preparing a mixture of cyclohexanone and graphene oxide S130Vaporizing mixture and supplying to a chamber S150Depositing thin film using PECVD by providing RF power