▎ 摘　　要

NOVELTY - The device has an oxidation graphene layer (110) provided with multiple oxidation graphene sheets on a part of a surface of a substrate (100), where longitudinal axis length of the oxidation graphene sheets is 50 nm-100 mm. A buffer layer is arranged between the substrate and a compound semiconductor layer, where the buffer layer comprises aluminum nitride, aluminum gallium nitride, gallium nitride, indium gallium nitride, indium nitride or aluminum gallium indium nitride. Another compound semiconductor layer is arranged between the substrate and the oxidation graphene layer. USE - Compound semiconductor device for a light emitting device i.e. LED. ADVANTAGE - The oxidation graphene layer is arranged between the substrate and the compound semiconductor layer so that the device can control tension caused by constant lattice difference between the substrate and the compound semiconductor layer. The device reduces crystal defect of a semiconductor by utilizing the oxidation graphene layer, thus improving luminous efficiency of a light emitting device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a compound semiconductor device fabricating method. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a compound semiconductor device. Substrate (100) Oxidation graphene layer (110)