▎ 摘　　要

NOVELTY - A film comprises a substrate and a transition metal dichalcogenide layer formed on the substrate. The substrate includes at least one chosen from graphene, reduced graphene oxide, and hexagonal boron nitride (h-BN). The transition metal dichalcogenide layer comprises rhenium oxysulfide (I). USE - Film used for surface-enhanced Raman analysis for sensor for detecting probe molecules in the femtomolar concentration (10-15 M) (all claimed). ADVANTAGE - The film has excellent stability, uniformity, and sensitivity to probe material, flexibility and can be manufactured uniformly over a large area. By controlling the temperature in the process of chalcogenation of the transition metal dichalcogenide precursor solution coated on the substrate, the concentration of chalcogen atoms can be controlled without post-treatment, it maximizes effect of surface-enhanced Raman spectroscopy of the film. The surface-enhanced Raman spectroscopic sensor can detect low concentration of probe material and can be manufactured in a large area. DETAILED DESCRIPTION - A film comprises a substrate and a transition metal dichalcogenide layer formed on the substrate. The substrate includes at least one chosen from graphene, reduced graphene oxide, and hexagonal boron nitride (h-BN). The transition metal dichalcogenide layer comprises rhenium oxysulfide of formula: ReOxSy (I). x,y = 0-2 (excluding 0). An INDEPENDENT CLAIM is included for manufacture of the film for surface-enhanced Raman analysis, which involves coating the transition metal dichalcogenide precursor solution on the substrate and introducing and heating a chalcogen source to the substrate coated with the transition metal dichalcogenide precursor solution to form the transition metal dichalcogenide layer. The chalcogen source comprises a chalcogen powder, in which ratio of chalcogen atoms of the transition metal dichalcogenide layer is controlled by controlling the temperature during the heating. The film comprises a vertical heterostructure comprising the transition metal dichalcogenide layer formed on the substrate and the substrate.