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  • 专利标题:   Plasma enhanced chemical vapor deposition of multi-layer graphene thin film comprises taking silicon carbide, depositing on glass substrate nanofilm, sputtering, heating and chemical vapor depositing.
  • 专利号:   CN104674189-A
  • 发明人:   GUO Z
  • 专利权人:   ZHEJIANG HANNAO DIGITAL TECHNOLOGY CO
  • 国际专利分类:   C23C016/02, C23C016/26, C23C016/44
  • 专利详细信息:   CN104674189-A 03 Jun 2015 C23C-016/44 201557 Pages: 6 Chinese
  • 申请详细信息:   CN104674189-A CN10658022 19 Nov 2014
  • 优先权号:   CN10658022

▎ 摘　　要

NOVELTY - Plasma enhanced chemical vapor deposition of multi-layer graphene thin film comprises taking silicon carbide, depositing on glass substrate nanofilm, sputtering, heating at 400-500 degrees C and chemical vapor depositing at 450-950 degrees C. USE - Method for plasma enhanced chemical vapor depositing multi-layer graphene thin film. ADVANTAGE - The thin film has high visible light transmission rate.