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  • 专利标题:   Manufacture of carbon nanotube used as semiconductor, involves supplying carbon raw material to metal catalyst having atomic arrangement of triangular lattice, and depositing graphene sheet of six membered ring structure.
  • 专利号:   JP2008037670-A, US2009136412-A1, JP4979296-B2, US8277770-B2
  • 发明人:   AWANO Y, NARUTSUKA S, KAWABATA A, MARUYAMA T, NARIZUKA S, NARITSUKA S
  • 专利权人:   FUJITSU LTD, UNIV MEIJO, UNIV MEIJO EDUCATIONAL FOUND
  • 国际专利分类:   C01B031/02, D01F009/12
  • 专利详细信息:   JP2008037670-A 21 Feb 2008 C01B-031/02 200819 Pages: 13 Japanese
  • 申请详细信息:   JP2008037670-A JP210655 02 Aug 2006
  • 优先权号:   JP210655

▎ 摘　　要

NOVELTY - A carbon raw material is supplied around the side wall of a metal catalyst (10) having an atomic arrangement of triangular lattice, and a graphene sheet (18) of six membered ring (16) structure which relates the atomic arrangement is deposited one by one to manufacture carbon nanotube having cylindrical structure. USE - Manufacture of carbon nanotube used as semiconductor. ADVANTAGE - The method efficiently manufactures carbon nanotube with controlled chirality. DESCRIPTION OF DRAWING(S) - The drawings show the growth process of a carbon nanotube. Metal catalyst (10) Surface atom (12) Carbon atom (14) Six membered ring (16) Graphene sheet (18)