▎ 摘　　要

NOVELTY - Preparing silicon carbide-graphene film with an epitaxial growth involves pre-treating silicon carbide-graphene substrate by washing substrate in upward face, and putting substrate facing upward into epitaxial growth device to prepare epitaxial growth substrate. The 4H-SiC homo-epitaxial growth is grown on obtained substrate by placing in vacuum chamber at vacuum degree of 8x 10-4Pa or less, and hydrogen is introduced continuously at rate of 7L/minutes. USE - Method for preparing silicon carbide-graphene film with an epitaxial growth (claimed). ADVANTAGE - The method enables to prepare silicon carbide-graphene film with an epitaxial growth, where number of layers are evenly distributed, and has good crystal quality. DETAILED DESCRIPTION - Preparing silicon carbide-graphene film with an epitaxial growth involves pre-treating silicon carbide-graphene substrate by washing substrate in upward face, and putting substrate facing upward into epitaxial growth device to prepare epitaxial growth substrate. The 4H-SiC homo-epitaxial growth is grown on obtained substrate by placing in vacuum chamber at vacuum degree of 8x 10-4Pa or less, and hydrogen is introduced continuously at rate of 7L/minutes. The substrate is placed in chamber and its temperature is raised from room temperature to 1600 degrees C for 10 minutes as growth phase, and silane is introduced into it at rate of 9-15mL/minutes, and propane is introduced into it at rate of 2-6mL/minutes for 60 minutes. The scratch at surface of substrate is covered by silicon carbide (SiC) surface to form covered surface, and temperature of device is reduced to 1000 degrees C under argon gas, where SiC forms a stable structure of 3x 3SiC, and its upward face has silicon surface. The epitaxial growth of graphene at 4H-SiC homo-epitaxial growth is performed by passing argon gas at rate of 1L/minutes at pressure of 133Pa so that it inhibits superficial sublimation of Si atoms in SiC, and generates non-leached quality of graphene. The temperature of cavity is raised from 1000-1100 degrees C and stabilized for 10 minutes, and with rise of temperature SiC is gradually changed to 1x 1SiC structure that is composed of 3x 3SiC structure, and 3x 3SiC structure is stabilized at 1100 degrees C, and temperature is raised to 1200 degrees C to form 63x 63R30 degrees of transition buffer layer structure. The temperature is raised to 1300-1600 degrees C for 30-50 minutes, and surface structure of 1x 1grphene structure forms 63x 63R30 transition degree, and temperature is reduced to room temperature to obtain stable graphene.