▎ 摘　　要

NOVELTY - The quantum dot light emitting device (100) comprises a substrate (10), graphene layer (20) and a luminous unit which comprises quantum dot light-emitting layer (40). A buffer layer (30) is prepared on the graphene layer, where the quantum dots (41) are surrounded with a coating material that is made of silica or silicon nitride. USE - Quantum dot light emitting device. ADVANTAGE - The quantum dot light emitting device comprises a substrate, graphene layer and a luminous unit which comprises quantum dot light-emitting layer, where a buffer layer is prepared on the graphene layer, thus ensures improved quantum dot light emitting device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a manufacturing method for quantum dot light emitting device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a quantum dot light emitting device. Substrate (10) Graphene layer (20) Buffer layer (30) Quantum dot light-emitting layer (40) Quantum dot (41) Quantum dot light emitting device (100)