▎ 摘　　要

NOVELTY - A semiconductor comprises a tungsten oxyselenide (TOS) p-type dopant. USE - Semiconductor e.g. one-dimensional semiconductor, two-dimensional semiconductor, or three-dimensional semiconductor including graphene, carbon nanotube, tetralayer tungsten diselenide, or dinaphthothienothiophene (all claimed) for organic semiconductor device used in photonic applications for telecommunications including transparent gate electrode near optical waveguides, and high-speed phase-modulator for infrared photonics. ADVANTAGE - The method enables creating stable doping patterns on a variety of semiconductor materials which reduce damage or defects on the resultant material. The method provides for the oxidation of tungsten diselenide to TOS without damaging underlying semiconductor layers. The resultant doping material can remain stable and operate effectively at low temperatures (e.g. 1.5 K). The doping can be stable for over a month, which can be useful for the creation of reliable semiconductor devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for doping of semiconductor.