▎ 摘　　要

NOVELTY - The method involves forming a graphene layer or a montmorillonite layer on a substrate. A rear electrode (110) is formed on the graphene layer or the montmorillonite layer. A copper indium gallium selenide light absorption layer (120) is formed on the rear electrode. A buffer layer (130) is formed on the copper indium gallium selenide light absorption layer. A front electrode (140) is installed on the buffer layer. A laminate composed of the rear electrode, the copper indium gallium selenide light absorption layer, the buffer layer, and the front electrode is separated with the graphene layer or the montmorillonite layer as a boundary. A transparent film is attached to the rear electrode and the front electrode of the laminate. USE - Method for manufacturing a copper indium gallium selenide solar cell. ADVANTAGE - The method enables increasing transparency and improving light efficiency, so that usability is increased compared to the conventional copper indium gallium selenide solar cell. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a copper indium gallium selenide solar cell. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of a copper indium gallium selenide solar cell (Drawing includes non-English language text). 110Rear electrode 120Copper indium gallium selenide light absorption layer 130Buffer layer 140Front electrode