▎ 摘　　要

NOVELTY - Silicon dioxide is deposited on the surface of cleaned silicon carbide sample wafer as mask, layer of optical resist is coated on the mask surface, silicon carbide is exposed to form structured pattern, sample wafer is transferred in quartz tube, heated, to form carbon film, added to hydrofluoric acid buffer solution, 300-500 nm layer of nickel film is deposited on another silicon sample wafer, carbon film sample wafer is removed, annealed to obtain structured graphene. USE - Method for preparing structured graphene used for manufacturing microelectronic device. ADVANTAGE - The method efficiently produces structured graphene with high safety, excellent continuity and low porosity by simple process. DETAILED DESCRIPTION - Silicon carbide sample wafer is washed to remove surface contaminant by plasma enhanced chemical vapor deposition method, 0.4-1.2 mu m layer of silicon dioxide is deposited on the surface of cleaned sample wafer as mask, layer of optical resist is coated on the mask surface, window in the same shape of the substrate on the mask is etched, silicon carbide is exposed to form structured pattern, sample wafer is transferred in quartz tube, heated at 700-1100 degrees C, argon and chlorine mixed gas is passed in the quartz tube for 3-8 minutes, chlorine reacts with exposed silicon carbide to generate carbon film, added to hydrofluoric acid buffer solution to remove silicon dioxide outside the window, 300-500 nm layer of nickel film is deposited on another silicon sample wafer by electron beam, carbon film sample wafer is removed using silicon dioxide and annealed at 1000-1200 degrees C for 10-30 minutes to obtain structured graphene on the window and nickel film from structured graphene sample wafer is removed.