▎ 摘　　要

NOVELTY - Method for growing large area and few layers of nitrogen-doped graphene with small molecules, involves placing raw materials by providing containing cavity and growth cavity, connecting containing cavity with growth cavity, placing growth substrate in growth cavity, and placing growth material in containing cavity, setting reaction conditions by vacuuming, connecting containing chamber with protective gas, setting flow rate of protective gas to 50-400 sccm, maintaining internal air pressure of containing cavity and growth cavity to be 20-100 Pa, adjusting temperature in growth cavity to 300-500 degrees C, adjusting temperature in containing cavity to 20-50 degrees C, and performing growth for 10-200 minutes, performing post-processing by continuously passing protective gas, and taking out growth substrate when pressure in growth cavity is balanced with external pressure. USE - The method is useful for growing large area and few layers of nitrogen-doped graphene with small molecules. ADVANTAGE - The method ensures catalytic reduction ability of the metal substrate, improves the safety of the preparation process and reduces the production cost. DETAILED DESCRIPTION - Method for growing large area and few layers of nitrogen-doped graphene with small molecules, involves placing raw materials by providing a containing cavity and a growth cavity, connecting the containing cavity with the growth cavity, placing growth substrate in the growth cavity, and placing growth material in the containing cavity, setting reaction conditions by vacuuming both the containing cavity and the growth cavity to below 10 Pa, connecting the containing chamber with protective gas, which is introduced from the containing cavity and discharged from the growth cavity, setting the flow rate of the protective gas to 50-400 sccm, maintaining the internal air pressure of the containing cavity and the growth cavity to be 20-100 Pa, adjusting the temperature in the growth cavity to 300-500 degrees C, adjusting the temperature in the containing cavity to 20-50 degrees C, and performing growth for 10-200 minutes, after the growth is completed, and performing post-processing by continuously passing protective gas until the temperature in the growth cavity drops to room temperature, and taking out the growth substrate when the pressure in the growth cavity is balanced with the external pressure to obtain the nitrogen-doped graphene, where the growth material is an aromatic small molecule compound, and the benzene ring of the aromatic small molecule compound covalently connected to at least one nitrogen atom, and the growth substrate is a metal substrate.