• 专利标题:   Direct conformal covering of graphene on needle tip surface for e.g. atomic force microscope electrically conductive needle tip involves cleaning needle tip surface, drying, placing in vacuum chamber, and discharging vacuum chamber air.
  • 专利号:   CN103924209-A, CN103924209-B
  • 发明人:   DU C, JIANG H, LI Z, SHI H, YANG J, ZHANG Y, WEI D, ZHU P, HUANG D, YU C
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   C23C016/26
  • 专利详细信息:   CN103924209-A 16 Jul 2014 C23C-016/26 201467 Pages: 8 Chinese
  • 申请详细信息:   CN103924209-A CN10181336 30 Apr 2014
  • 优先权号:   CN10181336

▎ 摘  要

NOVELTY - Graphene direct conformal covering on needle tip surface is performed by cleaning needle tip surface, drying, placing in plasma-enhanced chemical vapor deposition system vacuum chamber, discharging vacuum chamber air, filling vacuum chamber with protective gas, filling with hydrogen, heating needle tip to graphene growth temperature, introducing carbon source gas and protective gas as carrier in vacuum chamber, and maintaining gas pressure at graphene growth pressure while setting radio frequency power source to graphene growth power to realize direct growth of graphene on needle tip surface. USE - Direct conformal covering of graphene on needle tip surface for atomic force microscope (AFM) electrically conductive needle tip, field emission source, and bimolecular control and detection. ADVANTAGE - Process is low in cost, has simple operation, low preparation temperature, and short preparation period, does not need metal catalyst and complex graphene transfer process, and forms high quality, continuous, and uniform graphene thin film on tip and side surface of needle tip. DETAILED DESCRIPTION - Graphene direct conformal covering on needle tip surface is performed by cleaning needle tip surface, drying, placing in plasma-enhanced chemical vapor deposition system vacuum chamber, discharging vacuum chamber air, filling vacuum chamber with protective gas, filling with hydrogen, heating needle tip to graphene growth temperature, introducing carbon source gas and protective gas as carrier in vacuum chamber, maintaining gas pressure at graphene growth pressure while setting radio frequency power source to graphene growth power to realize direct growth of graphene on needle tip surface, closing radio frequency power supply, stopping introduction of carbon source gas in vacuum chamber, cooling needle tip to 10-30 degrees C at protective gas and graphene growth pressure, and taking out needle tip. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic diagram of graphene growth in needle tip tubular plasma-enhanced chemical vapor deposition system. Radio frequency coil (1) Tubular high temperature furnace body (2) Vacuum chamber (3) Needle tip (4) Vacuum pump (5)