• 专利标题:   Preparing fluorine-doped graphene quantum dot comprises decomposing graphene quantum dot, and bismuth difluoride, and bismuth to generate fluorine gas and helium gas, and driving, and entering photochemical reaction chamber.
  • 专利号:   CN108706579-A
  • 发明人:   LIU F, GAO F, KONG W, BAI X, XU X
  • 专利权人:   UNIV GUANGXI NORMAL
  • 国际专利分类:   C01B032/194, B82Y040/00
  • 专利详细信息:   CN108706579-A 26 Oct 2018 C01B-032/194 201876 Pages: 11 Chinese
  • 申请详细信息:   CN108706579-A CN10809646 23 Jul 2018
  • 优先权号:   CN10809646

▎ 摘  要

NOVELTY - Preparing fluorine-doped graphene quantum dot comprises using graphene quantum dot as a raw material, and bismuth difluoride is a fluorine source, and bismuth difluoride is first decomposed and decomposed to generate fluorine gas and helium gas, and the driving, fluorine gas and helium gas enters the photochemical reaction chamber, and using ultraviolet light to irradiate fluorine gas and graphene quantum dots in the photochemical reaction chamber, and generating the fluorine gas high activity fluorine radicals under ultraviolet light irradiation and reacting the graphene quantum dots under ultraviolet light irradiation. USE - The method is useful for preparing fluorine-doped graphene quantum dot. ADVANTAGE - The method is simple and easy to operate.