▎ 摘　　要

NOVELTY - Preparing metal oxide-doped graphene comprises (a) depositing graphene on a first substrate, (b) transferring the deposited graphene onto a second substrate to form a graphene electrode (work electrode), (c) providing a graphene electrode, a counter electrode, and a reference electrode in a reaction vessel containing an electrolyte, and (d) performing electrochemical deposition of a metal oxide on the graphene electrode. USE - The metal oxide-doped graphene is useful for field effect transistor (claimed), and in p-type semiconductor. ADVANTAGE - The method is simple and economical, and provides metal oxide-doped graphene having reduced strain by eliminating high-temperature synthesis process for doping metal oxide, and band gap function. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for field effect transistor comprising metal oxide-doped graphene prepared by the above method deposited on a channel layer.