▎ 摘　　要

NOVELTY - The manufacturing method involves forming a protection layer (161) which covers the metal pads (131,132,151,152) and graphene layer then etching surface of protection layer until only a residual layer made of a material for the forming the protection layer remains on active area (A) of graphene layer. A first metal layer formed on insulating material layer (120), and second metal layer formed over graphene layer, include gold, copper, palladium, nickel, titanium, chromium, iron, cobalt, platinum, or ruthenium. The protection layer includes aluminum oxide, silicon dioxide or hafnium oxide. USE - Manufacturing method of graphene device (claimed) e.g. FET , nanogap device, graphene sensor. ADVANTAGE - Enables manufacture of high quality graphene device since the stack structure including a first metal layer, a graphene layer, a second metal layer, and a protection layer are used to pattern the graphene device into a desired pattern, which reduces damage to graphene thus a high-quality graphene material may be used as an active area. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the graphene device illustrating a step in the device manufacturing method. Insulating material layer (120) Metal pads (131,132,151,152) Protection layer (161) Gate layer (170) Graphene device (400) Active area (A)