• 专利标题:   Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.
  • 专利号:   US2012181501-A1, CN102583327-A, TW201229329-A, CN102583327-B, TW477663-B1
  • 发明人:   SUNG C, SONG J
  • 专利权人:   SUNG C, SUNG C, SONG J, SONG J
  • 国际专利分类:   B32B009/04, B82Y099/00, C30B001/04, C30B001/10, H01L029/02, C01B031/00, C01B031/04, C30B001/02, C30B029/02
  • 专利详细信息:   US2012181501-A1 19 Jul 2012 H01L-029/02 201250 Pages: 8 English
  • 申请详细信息:   US2012181501-A1 US343155 04 Jan 2012
  • 优先权号:   US432435P, US343155

▎ 摘  要

NOVELTY - The method comprises applying a metal layer to a crystallographic face of a diamond substrate (12), heating the diamond substrate to a temperature of 600-1400 degrees C under vacuum of 10-4 to 10-6 torr to convert a portion of the diamond substrate at a (100) crystallographic face into graphene by martensitic transformation, removing the graphene from the diamond substrate, heating the diamond substrate to a temperature of greater than or equal to 700 degrees C in a hydrogen atmosphere to gasify non-epitaxial carbon atoms, and epitaxially depositing a semiconductor material (16) on the graphene. USE - The method is useful for making graphene on a nanodiamond substrate, which is useful in a diamond-graphene device such as molecule sensors, LEDs, LCDs, solar panels, pressure sensors, surface acoustic wave filters and/or resonators (all claimed), where the graphene is a one-atom-thick planar sheet of sp2 bonded carbon atoms. ADVANTAGE - The method is capable of efficiently making graphene on the diamond substrate with high quality, excellent electron mobility and improved thermal and electrical conductivity. DETAILED DESCRIPTION - The method comprises applying a metal layer to a crystallographic face of a diamond substrate (12), heating the diamond substrate to a temperature of 600-1400 degrees C under vacuum of 10-4 to 10-6 torr to convert a portion of the diamond substrate at a (100) crystallographic face into graphene by martensitic transformation, removing the graphene from the diamond substrate, heating the diamond substrate to a temperature of greater than or equal to 700 degrees C in a hydrogen atmosphere to gasify non-epitaxial carbon atoms, and epitaxially depositing a semiconductor material (16) on the graphene. The metal layer is applied only on single (111) crystallographic face of the diamond substrate having a same crystallographic orientation. An epitaxial relationship is maintained between the diamond substrate and the graphene. An INDEPENDENT CLAIM is included for a diamond-graphene device. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic cross-sectional view of a graphene on diamond device. Diamond substrate (12) Graphene material (14) Semi-conductor material. (16)