▎ 摘　　要

NOVELTY - Preparation of single-crystal graphene involves heating insulating material in a non-oxidizing atmosphere at 1200-1800 degrees C, maintaining for 10-30 minutes, maintaining the temperature constant, feeding carbon source and hydrogen in the reaction system, performing reaction on the insulating material finished processing using chemical vapor deposition method, closing the carbon source after the reaction is completed, and cooling to the room temperature in a non-oxidizing atmosphere. USE - Preparation of single-crystal graphene used in field of effect electronic device, high frequency electronic device, inverter, oscillator and sensor (all claimed). ADVANTAGE - The single-crystal graphene is efficiently prepared, by simple method.