▎ 摘　　要

NOVELTY - The optoelectronic semiconductor component has a layer stack (9), a first semiconductor region (4) of a first conductivity type, and a second semiconductor region (5) of a second conductivity type. An active zone (6) is arranged between the first and second semiconductor regions. A first contact unit is arranged on a first main surface (9B) for electrically contacting the first semiconductor region. A second contact unit is arranged on a side surface (9A) for electrically contacting with the second semiconductor region. A dielectric layer (12) is arranged between the second contact unit and the layer stack. A second side region (90B) is partially uncovered by the dielectric layer. The second contact unit has the area uncovered by the dielectric layer. USE - Optoelectronic semiconductor component e.g. microLED chip. ADVANTAGE - The first and second contact units are arranged outside of the layer stack, so that no area is consumed for contacting and the area efficiency or radiation efficiency is improved. The problems that occur with existing components at the metal contacts such as dark areas and so-called current crowding are prevented. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for producing optoelectronic semiconductor component. DESCRIPTION OF DRAWING(S) - The drawings show the cross-sectional and schematic views of the intermediate product along plane in method for producing optoelectronic semiconductor component. 4,5First and second semiconductor regions 6Active zone 9Layer stack 9ASide surface 9BFirst main surface 12Dielectric layer 90BSecond side region