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  • 专利标题:   Separating nitride semiconductor layer from substrate to manufacture nitride semiconductor device and wafer, by growing graphene layer in form of single layer/layers on surface of substrate and forming semiconductor layer on graphene layer.
  • 专利号:   US2010320445-A1, EP2267796-A2, JP2011009268-A, JP2011009281-A, CN101931035-A, EP2267796-A3, JP5070247-B2, JP5091920-B2, US8409366-B2, CN101931035-B
  • 发明人:   OGIHARA M, SAGIMORI T, SAKUTA M, HASHIMOTO A, OGIWARA M, WASHIMORI T, MITSUHIKO O, TOMOHIKO S, MASAAKI S, AKIHIRO H
  • 专利权人:   OKI DATA CORP, OKI DATA CORP, OKI DATA CORP, OKI DIGITAL IMAGING KK, OKI DATA KK, OKI DATA KK
  • 国际专利分类:   H01L021/30, H01L021/71, H01L029/12, H01L029/20, H01L033/02, H01L021/02, H01L021/20, H01L029/16, H01L033/00, H01L033/32, H01L021/205, H01L021/338, H01L029/778, H01L029/812, H01L031/10, H01S005/343, H01L023/00
  • 专利详细信息:   US2010320445-A1 23 Dec 2010 H01L-029/12 201101 Pages: 33 English
  • 申请详细信息:   US2010320445-A1 US801716 22 Jun 2010
  • 优先权号:   JP148455, JP148666

▎ 摘　　要

NOVELTY - The separation method comprises growing a graphene layer in the form of a single layer or layers on a surface of a first substrate, forming a nitride semiconductor layer (114) on the graphene layer so that the nitride semiconductor layer is bonded to the graphene layer with a bonding force due to regularity of potential at atomic level at an interface without utilizing covalent bonding, and separating the nitride semiconductor layer from the first substrate with a force, which is greater than the bonding force between the nitride semiconductor layer and the graphene layer. USE - The method is useful for separating a nitride semiconductor layer from a first substrate for manufacturing a nitride semiconductor device and a semiconductor wafer (all claimed), where the nitride semiconductor device includes LED and the first substrate is a silicon carbide substrate. ADVANTAGE - The method is capable of effectively separating the nitride semiconductor layer from the silicon carbide substrate thus economically manufacturing the large diameter semiconductor wafer and the high quality single crystal nitride semiconductor device with high light emission efficiency and without lattice mismatch. DETAILED DESCRIPTION - The separation method comprises growing a graphene layer in the form of a single layer or layers on a surface of a first substrate, forming a nitride semiconductor layer (114) on the graphene layer so that the nitride semiconductor layer is bonded to the graphene layer with a bonding force due to regularity of potential at atomic level at an interface without utilizing covalent bonding, and separating the nitride semiconductor layer from the first substrate with a force, which is greater than the bonding force between the nitride semiconductor layer and the graphene layer or greater than a bonding force between layers of the graphene layer. INDEPENDENT CLAIMS are included for: (1) a method of manufacturing a nitride semiconductor device; (2) a semiconductor device; (3) a method of manufacturing a semiconductor wafer; and (4) a semiconductor wafer. DESCRIPTION OF DRAWING(S) - The diagram shows a sectional view of a process for separating a nitride semiconductor layer from a silicon carbide substrate. Silicon carbide substrate (101) Epitaxial graphene layer (110) Nitride semiconductor layer (114) Supporting body adhesion layer (122) Supporting body. (124)