• 专利标题:   Composite interlaced stack intercalation structure graphene- bismuth gas gel, has graphene whose layered structure is inserted with bismuth layer, and each unit centimeter whose thickness is provided with micro units, where each micro-unit is provided with layers of single-layer graphene.
  • 专利号:   CN115020120-A
  • 发明人:   GUI P, WEI N, HUANG L, WU J, ZHOU Y, NING R, TANG M, RONG D, ZENG W
  • 专利权人:   UNIV ANHUI
  • 国际专利分类:   G01L001/14, H01G011/56, H01G011/84
  • 专利详细信息:   CN115020120-A 06 Sep 2022 H01G-011/56 202285 Chinese
  • 申请详细信息:   CN115020120-A CN10585330 26 May 2022
  • 优先权号:   CN10585330

▎ 摘  要

NOVELTY - The gel has a graphene whose layered structure is inserted with a bismuth layer. A staggered stack intercalation structure is formed. Thickness of each unit centimeter is provided with 80-100 micro units. Each micro-unit is provided with 800-900 layers of a single-layer graphene and 80-100 layers of a single-layer bismuth-alkene layers. USE - Composite interlaced stack intercalation structure graphene-bismuth gas gel. ADVANTAGE - The gel has high elastic and compressible performance and sensitivity and better stress range and capacitor characteristics, and effectively detects low voltage, and improves cycle stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a composite interlaced stack intercalation structure graphene- bismuth gas gel preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a composite interlaced stack intercalation structure graphene-bismuth gas gel. (Drawing includes non-English language text).