▎ 摘　　要

NOVELTY - The structure (4) has a substrate (410) on which a graphene layer (430), a first electrode (450), a second electrode (440) and a third electrode (470) are formed. The first electrode and second electrode directly contact both ends of the graphene layer. The graphene layer and substrate are separated by a first insulating layer (420). The third electrode and graphene layer are separated by a second insulating layer (460). The energy gap of the graphene layer is greater than 300 meV. The graphene layer is provided with a layer of graphene structure. USE - Micro-electronic structure such as double gate FET (claimed). ADVANTAGE - The micro-electronic structure can use the high energy gap graphene material to enhance the electronic properties. The graphene layer with the same size and shape can be fabricated by selectively adding an appropriate cleaning process during the manufacturing process to meet the need of mass production of the micro-electronic structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of forming a micro-electronic structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the structure of the micro-electronic structure. Micro-electronic structure (4) Substrate (410) First insulating layer (420) Graphene layer (430) Second electrode (440) First electrode (450) Second insulating layer (460) Third electrode (470)